creat by art - low power loss, high efficiency - guardring for overvoltage protection - high surge current capability - halogen-free according to iec 61249-2-21 definition molding compound, ul flammability classification rating 94v-0 base p/n with suffix "g" on packing code - halogen-free base p/n with prefix "h" on packing code - aec-q101 qualified terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test, with prefix "h" on packing code meet jesd 201 class 2 whisker test v rrm 35 45 50 60 90 100 150 200 v v rms 24 31 35 42 63 70 105 140 v v dc 35 45 50 60 90 100 150 200 v i f(av) a i rrm a dv/dt v/ s r jc o c/w t j o c t stg o c document number: ds_d1308050 version: l13 mbr1035 thru mbr10200 taiwan semiconductor schottk y barrier rectifier features - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec to-220ac mechanical data case: to-220ac polarity: as marked mounting torque: 5 in-lbs maximum weight: 1.88 g (approximately) maximum ratings and electrical characteristics (t a =25 unless otherwise noted) parameter symbol mbr 1035 mbr 1045 mbr 1050 mbr 1060 mbr 1090 mbr 10100 mbr 10150 unit maximum repetitive peak reverse voltage maximum rms voltage maximum dc blocking voltage peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load i fsm a peak repetitive reverse surge current (note 1) 1.0 maximum average forward rectified current peak repetitive forward current (rated vr, square wave, 20khz) i frm a maximum instantaneous forward voltage (note 2) i f =10a, t j =25 i f =10a, t j =125 v f v 0.70 0.80 0.85 0.57 typical thermal resistance operating junction temperature range - 55 to +150 maximum reverse current @ rated vr t j =25 t j =125 i r ma 15 10 storage temperature range note 1: tp = 2.0 s, 1.0khz note 2: pulse test with pw=300 s, 1% duty cycle mbr 10200 10 20 150 0.5 voltage rate of change (rated v r ) - 55 to +175 1.05 - 0.1 6 3 10000 0.70 0.71
part no. part no. mbr1060 mbr1060 mbr1060 (ta=25 unless otherwise noted) document number: ds_d1308050 version: l13 mbr1035 thru mbr10200 taiwan semiconductor ordering information aec-q101 qualified packing code green compound code package packing note 1: "xx" defines voltage from 35v (mbr1035) to 200v (mbr10200) example mbr10xx (note 1) prefix "h" c0 suffix "g" to-220ac 50 / tube aec-q101 qualified preferred p/n aec-q101 qualified packing code green compound code description mbr1060 c0 c0 ratings and characteristics curves mbr1060 c0g c0 g green compound mbr1060hc0 h c0 0 2 4 6 8 10 12 0 50 100 150 average forward a current (a) case temperature ( o c) fig.1- forward current derating curve resistive or inductiveload with heatsink mbr1035-mbr1045 mbr1050-mbr10200 25 50 75 100 125 150 175 0 1 10 100 peak forward surge current (a) number of cycles at 60 hz fig. 2- maximum non-repetitive forward surge current 0.001 0.01 0.1 1 10 100 0 20 40 60 80 100 120 140 instantaneous reverse current (ma) percent of rated peak reverse voltage (%) fig. 4- typical reverse characteristics tj=75 tj=125 tj=25 mbr1035-mbr1060 mbr1090-mbr10200 0.01 0.1 1 10 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 instantaneous forward current (a) forward voltage (v) fig. 3- typical instantaneous forward characteristics tj=125 pulse width=300 s 1% duty cycle tj=25 mbr1035-mbr1045 mbr1050-mbr1060 mbr1090-mbr10100 mbr10150-mbr10200
min max min max a - 10.50 - 0.413 b 2.62 3.44 0.103 0.135 c 2.80 4.20 0.110 0.165 d 0.68 0.94 0.027 0.037 e 3.54 4.00 0.139 0.157 f 14.60 16.00 0.575 0.630 g 0.00 1.60 0.000 0.063 h 13.19 14.79 0.519 0.582 i 4.95 5.20 0.195 0.205 j 4.42 4.76 0.174 0.187 k 1.14 1.40 0.045 0.055 l 5.84 6.86 0.230 0.270 m 2.20 2.80 0.087 0.110 n 0.35 0.64 0.014 0.025 p/n = marking code g = green compound yww = date code f = factory code document number: ds_d1308050 version: l13 marking diagram mbr1035 thru mbr10200 taiwan semiconductor package outline dimensions dim. unit (mm) unit (inch) 100 1000 10000 0.1 1 10 100 junction capacitance (pf) a reverse voltage (v) fig. 5- typical junction capacitance f=1.0mhz vsig=50mvp-p 0.1 1 10 100 0.01 0.1 1 10 100 transient thermal impedance ( /w) t-pulse duration. (sec) fig. 6- typical transient thermal characteristic
creat by art assumes no responsibility or liability for any errors inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied,to any intellectual property rights is granted by this document. except as provided in tsc's terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale. document number: ds_d1308050 version: l13 mbr1035 thru mbr10200 taiwan semiconductor notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf,
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